STT800GK18 SCR-module DATASHEET

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STT800GK18 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum repetitive peak and off-state voltage VDRM 1800 V
Maximum average on-state current IT(AVR) 800 A
Maximum RMS on-state current IT(RMS) 1256 A
Non repetitive surge peak on-state current ITSM 30000 A
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..140 °C
Junction to case thermal resistance RTH(j-c) 0.04 K/W

STT800GK18 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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STT800GK18
 datasheet

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 datasheet #2

Description

STT800GKXXPT Thyristor-Thyristor Modules Colerance:+0.5mm - Dimensions in mm (1mm=0.0394") Type VRSM VRRM VDSM VDRM V V STT800GK08PT 900 800 STT800GK12PT 1300 1200 STT800GK14PT 1500 1400 STT800GK16PT 1700 1600 STT800GK18PT 1900 1800 Symbol Test Conditions Maximum Ratings Unit A ITAV TC=85oC; 180o half sine wave,50HZ 800 1256 ITRMS TC=85oC; 180o Full cycle sine wave,50HZ A TVJ=TVJM 180o half sine wave,50HZ single pulse; 30.0 ITSM T =25oC VR=0; 35.0 C A 2 Gate pulse;20V,