T12M25F600B Triac DATASHEET

DATASHEET SEARCH FORM

T12M25F600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.35 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 60 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 1.25 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 10 mA
Holding current IH 15 mA
Package TO-220AB

T12M25F600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

T12M25F600B Datasheet. Page #1

T12M25F600B
 datasheet

Page #2

T12M25F600B
 datasheet #2

Description

LITE-ON T12M25F600B SEMICONDUCTOR TRIACS Triacs 12 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts DIM. MIN. MAX. M A C 14.22 15.88 All Diffused and Glass Passivated Junctions for D B 9.65 10.67 Greater Parameter Uniformity and Stability C A 2.54 3.43 K Small, Rugged, Thermowatt Construction for Low D 5.84 6.86 E Thermal Resistance, High Heat Dissipation and PIN E 9.28 8.26 Durability