T12M35T600B Triac DATASHEET

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T12M35T600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.35 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Critical repetitive rate of rise of on-state current dI/dt 10 A/µs
Critical rate of rise of off-state voltage dV/dt 400 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.78 V
Peak on-state voltage drop VTM 1.85 V
Triggering gate current IGT 13 mA
Holding current IH 20 mA
Package TO-220AB

T12M35T600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T12M35T600B Datasheet. Page #1

T12M35T600B
 datasheet

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 datasheet #2

Description

LITE-ON T12M35T-B SERIES SEMICONDUCTOR TRIACS Triacs 12 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L MAX. DIM. MIN. Blocking Voltage to 600 Volts M A C 14.22 15.88 Uniform Gate Trigger Currents in Three Quadrants, Q1, D B 9.65 10.67 Q2, and Q3 C A 2.54 3.43 K High Immunity to dv/dt — 400 V/us Min. at 125℃ D 5.84 6.86 E High Surge Current Capability — 100 Amperes PIN E 9.28 8.26 1 2 3 Pb Free Package F