# T4M10T600B Triac DATASHEET

SCRTRIAC.COM

PARAMETER | SYMBOL | VALUES | UNITS |
---|---|---|---|

Type | Triac | ||

Maximum peak gate power | P_{GM} |
0.1 | W |

Maximum repetitive peak and off-state voltage | V_{DRM} |
600 | V |

Maximum RMS on-state current | I_{T(RMS)} |
4 | A |

Non repetitive surge peak on-state current | I_{TSM} |
40 | A |

Critical repetitive rate of rise of on-state current | dI/dt | 10 | A/µs |

Critical rate of rise of off-state voltage | dV/dt | 150 | V/µs |

Maximum operating junction and storage temperature range | T_{stg}, T_{j} |
-40..125 | °C |

Junction to ambient thermal resistance | R_{TH(j-a)} |
62.5 | K/W |

Junction to case thermal resistance | R_{TH(j-c)} |
2.2 | K/W |

Triggering gate voltage | V_{GT} |
0.7 | V |

Peak on-state voltage drop | V_{TM} |
1.6 | V |

Triggering gate current | I_{GT} |
4 | mA |

Holding current | I_{H} |
5 | mA |

Package | TO-220AB |

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LITE-ON T4M10T-B SERIES SEMICONDUCTOR TRIACS Sensitive Gate Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES Sensitive Gate Allows Triggering by Microcontrollers TO-220AB B L and other Logic Circuits DIM. MIN. MAX. M A C 14.22 High Immunity to dv/dt - 50 V/us Minimum at 125℃ 15.88 D B 9.65 10.67 Commutating di/dt - 3.0 A/ms Minimum at 125℃ C A 2.54 3.43 K Minimum and Maximum Values of IGT, VGT and IH D 5.84 6.86 E Spe