T4M10T600F Triac DATASHEET

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T4M10T600F ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 40 A
Critical rate of rise of off-state voltage dV/dt 75 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 20 K/W
Junction to case thermal resistance RTH(j-c) 6 K/W
Triggering gate voltage VGT 1.3 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 10 mA
Holding current IH 15 mA
Package TO-225

T4M10T600F Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T4M10T600F Datasheet. Page #1

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 datasheet

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Description

LITE-ON T4M10T600F SEMICONDUCTOR TRIACS Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-126 FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 600 V Low Level Triggering and Holding Characteristics Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Of