T4M3F600B Triac DATASHEET

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T4M3F600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 40 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.62 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 1.8 mA
Holding current IH 1.5 mA
Package TO-220AB

T4M3F600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T4M3F600B Datasheet. Page #1

T4M3F600B
 datasheet

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T4M3F600B
 datasheet #2

Description

LITE-ON T4M3F600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Passivated Die for Reliability and Uniformity DIM. MIN. MAX. M A 14.22 15.88 C Four-Quadrant Triggering D B 9.65 10.67 Blocking Voltage to 600 V A C K 2.54 3.43 On-State Current Rating of 4.0 Amperes RMS at 93° C P E D 5.84 6.86 PIN Low Level Triggering and Holding Characteristics E 9.28 8.26 1 2 3 Pb-Free