T8M25F600B Triac DATASHEET

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T8M25F600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.35 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 60 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 1.25 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 10 mA
Holding current IH 15 mA
Package TO-220AB

T8M25F600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T8M25F600B Datasheet. Page #1

T8M25F600B
 datasheet

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T8M25F600B
 datasheet #2

Description

LITE-ON T8M25F600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage 600 Volts M DIM. MIN. MAX. C A 14.22 15.88 All Diffused and Glass Passivated Junctions for D B 9.65 10.67 Greater Parameter Uniformity and Stability A K C 2.54 3.43 Small, Rugged, Thermowatt Construction for Low E D 5.84 6.86 Thermal Resistance, High Heat Dissipation and PIN E 9.28 8.26 1 2