T8M50F600B Triac DATASHEET

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T8M50F600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.9 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 12 mA
Holding current IH 6 mA
Package TO-220AB

T8M50F600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T8M50F600B Datasheet. Page #1

T8M50F600B
 datasheet

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T8M50F600B
 datasheet #2

Description

LITE-ON T8M50F-B SERIES SEMICONDUCTOR TRIACS Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES Blocking Voltage to 600 Volts TO-220AB B L DIM. MIN. MAX. All Diffused and Glass Passivated Junctions for M A C 14.22 15.88 Greater Parameter Uniformity and Stability D B 9.65 10.67 Small, Rugged, Thermowatt Construction for Low C A 2.54 3.43 K Thermal Resistance, High Heat Dissipation and D 5.84 6.86 E Durability PIN E 9.28 8.