T8M5T600B Triac DATASHEET

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T8M5T600B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 0.35 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 70 A
Critical repetitive rate of rise of on-state current dI/dt 10 A/µs
Critical rate of rise of off-state voltage dV/dt 75 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.2 K/W
Triggering gate voltage VGT 0.62 V
Peak on-state voltage drop VTM 1.85 V
Triggering gate current IGT 2 mA
Holding current IH 3 mA
Package TO-220AB

T8M5T600B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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T8M5T600B Datasheet. Page #1

T8M5T600B
 datasheet

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 datasheet #2

Description

LITE-ON T8M5T600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB Sensitive Gate Allows Triggering by Microcontrollers B L DIM. MIN. MAX. and other Logic Circuits M A C 14.22 15.88 Uniform Gate Trigger Currents in Three Quadrants; Q1, D B 9.65 10.67 Q2, and Q3 C A 2.54 3.43 K High Immunity to dv/dt - 25 V/_s Minimum at 110℃ D 5.84 6.86 E High Commutating di/dt - 8.0 A/ms Mi