TIC106N SCR DATASHEET

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TIC106N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 1.3 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 3.2 A
Maximum RMS on-state current IT(RMS) 5 A
Non repetitive surge peak on-state current ITSM 30 A
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 3.5 K/W
Triggering gate voltage VGT 0.6 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.06 mA
Holding current IH 5 mA
Package TO-220

TIC106N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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TIC106N Datasheet. Page #1

TIC106N
 datasheet

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TIC106N
 datasheet #2

Description

TIC106 SERIES SILICON CONTROLLED RECTIFIERS ● 5 A Continuous On-State Current ● 30 A Surge-Current TO-220 PACKAGE (TOP VIEW) ● Glass Passivated Wafer K 1 ● 400 V to 800 V Off-State Voltage A 2 ● Max IGT of 200 µA G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC106D 400 TIC106M 600 Repetitive peak off-state voltage (see Note 1) VDRM V TIC