TIC216A Triac DATASHEET

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TIC216A ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 2.2 W
Maximum repetitive peak and off-state voltage VDRM 100 V
Maximum RMS on-state current IT(RMS) 6 A
Non repetitive surge peak on-state current ITSM 60 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 2.2 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 5 mA
Holding current IH 30 mA
Package TO-220

TIC216A Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

TIC216A Datasheet. Page #1

TIC216A
 datasheet

Page #2

TIC216A
 datasheet #2

Description

SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Quadrants 1-3) • Sensitive gate triacs • Compliance to ROH ABSOLUTE MAXIMUM RATINGS Value Unit Symbol Ratings A B D M S N Repetitive peak off-state voltage VDRM 100 200 400 600 700 800 V (see Note1) Full-cycle RMS on-state current at (or below) IT(RMS) 6 A 70°C case temperature (