TIC216S Triac DATASHEET

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TIC216S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 2.2 W
Maximum repetitive peak and off-state voltage VDRM 700 V
Maximum RMS on-state current IT(RMS) 6 A
Non repetitive surge peak on-state current ITSM 60 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 2.2 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 5 mA
Holding current IH 30 mA
Package TO-220

TIC216S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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TIC216S Datasheet. Page #1

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 datasheet

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 datasheet #2

Description

TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs TO-220 PACKAGE (TOP VIEW) ● 6 A RMS MT1 1 ● Glass Passivated Wafer MT2 2 ● 400 V to 800 V Off-State Voltage G 3 ● Max IGT of 5 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC216D 400 TIC216M 600 Repetitive peak off-state voltage (see Note 1) VDRM V TIC216S 700 TIC216N