TIC225C Triac DATASHEET

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TIC225C ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 2.2 W
Maximum repetitive peak and off-state voltage VDRM 300 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 70 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 11.7 mA
Holding current IH 4.7 mA
Package TO-220

TIC225C Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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TIC225C Datasheet. Page #1

TIC225C
 datasheet

Page #2

TIC225C
 datasheet #2

Description

SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR • Sensitive gate triacs • 8 A RMS • 70 A Peak • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1) • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Te