TIC236N Triac DATASHEET

DATASHEET SEARCH FORM

TIC236N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 400 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 2 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 19 mA
Holding current IH 22 mA
Package TO-220

TIC236N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

TIC236N Datasheet. Page #1

TIC236N
 datasheet

Page #2

TIC236N
 datasheet #2

Description

SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS • High current triacs • 12 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) Full-cycle RMS on-state current IT(RMS) at (or be