TIC246E Triac DATASHEET

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TIC246E ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 500 V
Maximum RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current ITSM 125 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 400 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 1.9 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 19 mA
Holding current IH 22 mA
Package TO-220

TIC246E Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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TIC246E Datasheet. Page #1

TIC246E
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TIC246E
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Description

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • 125 A peak current • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate si