TIC246S Triac DATASHEET

DATASHEET SEARCH FORM

TIC246S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum repetitive peak and off-state voltage VDRM 700 V
Maximum RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current ITSM 125 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 400 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 62.5 K/W
Junction to case thermal resistance RTH(j-c) 1.9 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 19 mA
Holding current IH 22 mA
Package TO-220

TIC246S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

TIC246S Datasheet. Page #1

TIC246S
 datasheet

Page #2

TIC246S
 datasheet #2

Description

TIC246 SERIES SILICON TRIACS ● High Current Triacs TO-220 PACKAGE (TOP VIEW) ● 16 A RMS MT1 1 ● Glass Passivated Wafer MT2 2 ● 400 V to 800 V Off-State Voltage G 3 ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC246D 400 TIC246M 600 Repetitive peak off-state voltage (see Note 1) VDRM