TSN10A80 SCR DATASHEET

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TSN10A80 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 10 A
Non repetitive surge peak on-state current ITSM 500 A
Critical repetitive rate of rise of on-state current dI/dt 1500 A/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 80 K/W
Junction to case thermal resistance RTH(j-c) 5 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 20 mA
Holding current IH 7 mA
Package TO-262

TSN10A80 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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TSN10A80 Datasheet. Page #1

TSN10A80
 datasheet

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 datasheet #2

Description

THYRISTOR Type:TSN10A80 10A, 800V 構造: シリコンプレーナ型逆導通サイリスタ 用途: HIDランプ点灯用 コンデンサ放電制御用 バラスト回路用 ■ 最大定格 項 目 記号 条 件 定 格 値 単位 繰り返しピ-クオフ電圧 VD M T j=25℃ 800 V R TC≦100℃,VDM≦400V 繰り返しピークオン電流 IG≧80mA,dig/dt≧0.5A/μs IT M 500 A