USF8J48 SCR DATASHEET

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USF8J48 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 8 A
Maximum RMS on-state current IT(RMS) 12.6 A
Non repetitive surge peak on-state current ITSM 120 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2.8 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 1.5 V
Triggering gate current IGT 10 mA
Holding current IH 40 mA
Package TO-263

USF8J48 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48,SF8J48,USF8G48,USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V =400,600V DRM Repetitive Peak Reverse Voltage : VRRM=400,600V Average On-State Current : I =8A T (AV) Gate Trigger Current : I =10mA Max. GT Unit in mm SF8G48 · SF8J48 USF8G48 · USF8J48 JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1B TOSHIBA 13-10J2B Weight : 1.7g MARKING F8G4