VS-12TTS08PBF SCR DATASHEET

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VS-12TTS08PBF ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 8 A
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 0.02 mA
Package TO-220AB

VS-12TTS08PBF Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

VS-12TTS08PBF Datasheet. Page #1

VS-12TTS08PBF
 datasheet

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VS-12TTS08PBF
 datasheet #2

Description

VS-12TTS08PbF, VS-12TTS08-M3 www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 12 A FEATURES 2 (A) • Designed and qualified according to JEDEC-JESD47 • 125 °C max. operating junction temperature • Material categorization: 3 For definitions of compliance please see 2 1 (K) (G) 3 1 www.vishay.com/doc?99912 TO-220AB Available APPLICATIONS • Typical usage is in input rectification crowbar (soft start) PRODUCT SUMMARY and AC switch in