VS-12TTS08S-M3 SCR DATASHEET

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VS-12TTS08S-M3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 8 A
Peak on-state voltage drop VTM 1.2 V
Triggering gate current IGT 0.02 mA
Package TO-263AB_TO-263

VS-12TTS08S-M3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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VS-12TTS08S-M3 Datasheet. Page #1

VS-12TTS08S-M3
 datasheet

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VS-12TTS08S-M3
 datasheet #2

Description

VS-12TTS08S-M3 Series www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according JEDEC®-JESD47 2 • Material categorization:  3 For definitions of compliance please see 1 3 1 www.vishay.com/doc?99912 Cathode Gate TO-263AB (D2PAK) APPLICATIONS • Input rectification and crow-bar (soft start) PRODUCT SUMMARY • Vishay in