VS-ST083S12P SCR DATASHEET

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VS-ST083S12P ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 85 A
Maximum RMS on-state current IT(RMS) 135 A
Non repetitive surge peak on-state current ITSM 2450 A
Critical repetitive rate of rise of on-state current dI/dt 1000 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.2 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 2.15 V
Triggering gate current IGT 0.2 mA
Holding current IH 0.6 mA
Package TO-209AC

VS-ST083S12P Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

VS-ST083SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 85 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance • High speed performance • Compression bonding TO-209AC (TO-94) • Designed and qualified for industrial level • Material categorization: For definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc?99912 Package TO-209AC (TO-94) TYPICAL APPLICATIONS Diode v