VS-ST180SPBF SCR DATASHEET

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VS-ST180SPBF ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 200 A
Peak on-state voltage drop VTM 1.75 V
Triggering gate current IGT 0.15 mA
Package TO-209AB_TO-209AB

VS-ST180SPBF Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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VS-ST180SPBF Datasheet. Page #1

VS-ST180SPBF
 datasheet

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Description

VS-ST180SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 200 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) • Hermetic metal case with ceramic insulator  (Also available with glass-metal seal up to 1200 V) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) • Designed and qualified for industrial level • Material categorization: