WCD8C60 SCR DATASHEET

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WCD8C60 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Triggering gate voltage VGT 1.5 V
Triggering gate current IGT 15 mA
Holding current IH 20 mA
Package TO-252

WCD8C60 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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WCD8C60 Datasheet. Page #1

WCD8C60
 datasheet

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WCD8C60
 datasheet #2

Description

WCD8C60 WCD8C60 WCD8C60 WCD8C60 Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Repetitive Peak Off-State Voltage:600V � R.M.S On-State Current (IT =8A) (RMS) � Low On-State Voltage(1.4(Typ.)@ITM) � Isolation Voltage(V =1500V AC) ISO General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage