WCD8C60S SCR DATASHEET

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WCD8C60S ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 8 A
Triggering gate voltage VGT 0.8 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-252

WCD8C60S Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

WCD8C60S Datasheet. Page #1

WCD8C60S
 datasheet

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WCD8C60S
 datasheet #2

Description

WCD8C60S WCD8C60S WCD8C60S WCD8C60S Sensitive Gate Sensitive Gate Sensitive Gate Sensitive Gate Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Silicon Controlled Rectifiers Features � Sensitive gate trigger current:I =200µA maximum GT � Low On-State Voltage :V =1.2(typ.) @ I ) TM TM � Low reverse and forward blocking current: I /I =1mA@TC=125℃ DRM RRM � Low holding current :I =5mA maximum H General Description Sensit