Y65KKE SCR DATASHEET

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Y65KKE ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum average on-state current IT(AVR) 2080 A
Non repetitive surge peak on-state current ITSM 21000 A
Critical repetitive rate of rise of on-state current dI/dt 1200 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.01 K/W
Peak on-state voltage drop VTM 2.33 V

Y65KKE Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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Description

Y65KKE FAST TURN-OFF THYRISTOR Features  Interdigitated amplifying gates  Fast turn-on and high di/dt IT(AV) 2080A  Low switching losses VDRM/VRRM 800~1800V Typical Applications tq 18~50µs  Inductive heating ITSM 21 kA  Electronic welders  Self-commutated inverters I2t 2205 103A2S VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55°C 2080 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side coo